Stacking-fault formation and propagation in 4H-SiC PiN diodes

Electronic driving force for stacking fault expansion in 4H-SiC

Trapping of electrons in stacking fault SF interface states may lower the energy of a SF more than it costs to form the SF. This “electronic stress” driving force for SF expansion is evaluated for single and double stacking faults in 4H-SiC in terms of a two-dimensional free-electron density of states model based on first-principles calculations. In contrast with previous work, which claimed th...

Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

Avalanche Multiplication and Breakdown in 4H-SiC Diodes

The measured photomultiplication and excess noise characteristics of two 4H-SiC p-i-n diodes, with i-region widths of 0.105 μm and 0.285 μm, were modelled using a nonlocal multiplication model to determine the ionization threshold energies and the impact ionization coefficients of 4H-SiC. The modelled ionization coefficients accurately predicted the breakdown voltage of a 0.485 μm p-i-n structu...

Graphite based Schottky diodes on Si, GaAs, and 4H-SiC

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...

Graphene formation mechanisms on 4H-SiC(0001)